forward-biased

英 [ˈfɔːwəd ˈbaɪəst]

美 [ˈfɔːrwərd ˈbaɪəst]

网络前向偏置; 正偏; 顺向偏压; 正向偏压; 顺向电流

During an ESD event, both D1 and D2 can conduct, but the voltage at VIN exceeds the power-supply-rail voltage by only two forward-biased diode voltage drops.
在ESD事件中，D1和D2可以进行传导，但通过两个前置偏移二极管压降，VIN端的电压超出供电电源电压。
Fig2.This curve shows the typical forward-biased characteristics of a PV cell, with the maximum power ( PMAX) occurring at the junction of the maximum current ( IMAX) and the maximum voltage ( VMAX).
图2。该曲线给出了PV电池的典型正偏特性，其中最大功率（PMAX）出现在最大电流（IMAX）和最大电压（VMAX）的交叉点。
The Fend level difference between the grain boundary and the gum in the forward-biased side is only a quantity in kT outer, and the acceptor defect layer does not change the relation between this quantity and bias but the chop the coefficent.
晶界和正偏向晶粒的费未能级只差一个kT数量级的值，受主缺陷扩散层存在并不改变该值和外加电压的关系但系数增大。
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors ( GIR) is described and main parameters are given.
本文对功率晶体管（GTR）正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
The Safe Display of Secondary Breakdown Characteristic Curve in Forward-biased Transistors
晶体三极管正偏二次击穿特性曲线的安全显示