c-v
英 [siː viː]
美 [siː viː]
网络 电容-电压; 高频电容-电压; 势垒高度
双语例句
- Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3
N2和NH3退火对铪铝氧栅介质C-V特性的影响 - Study on Color Image Segmentation with Level Set Method Based on C-V Model
基于C-V模型水平集方法的彩色图像分割研究 - Improved C-V Level Set Model Image Segmentation Algorithm
改进的C-V水平集模型图像分割算法 - Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET
6H-SiC埋沟MOSFET的C-V解析模型研究 - Multiphase Segmentation of Liver Lesion in CT Images Based on C-V Model
基于C-V模型的肝脏病灶CT图像多相分割 - The Segmentation of Infrared Plane Image Based on the Balloon Model of C-V Method
基于C-V的压力模型对飞机红外图像分割 - Finally, a phase-change line tracking algorithm is presented by introducing shape priori characteristics into C-V active contour model.
最后在考虑帧间相变线关联性的基础上，提出一种融合形状先验特征的C-V主动轮廓模型相变线跟踪算法。 - To solve the problem, an algorithm for multi-layer object segmentation based on Chan-Vese ( C-V) model is proposed.
实验结果表明，结合核主成份分析的特征提取，支持向量机方法是一种很有前景的多目标图像分割技术。 - Improvement of C-V segmentation model based on Gaussian filter
基于高斯滤波C-V模型分割算法的改进 - Investigation of Composition and C-V Characteristics in the Reactive Sputtered SiO_xN_y Gate Dielectric Film
反应溅射SiOxNy栅介质薄膜的成分及C-V特性研究 - Segmentation of motion objects based on graph cuts and C-V model;
将两种基于图论的算法图切割与随机游走应用于运动对象的分割。 - A new method based on C-V active contour model is proposed to extract phase-change line automatically from complex phase-change thermography sequence.
针对复杂相变热图序列相变线自动提取问题，提出一种基于帧间差分信息的C-V主动轮廓模型提取方法。 - And we analyze the influence of the carrier freeze-out and defect on the different temperature and frequency C-V measurement.
并分析在不同温度与量测频率的条件下，载子冻结与样品所含的缺陷对于电容电压量测之影响。 - The distortion of the C-V characteristics of a SiC buried-channel MOS structure is presented.
用数值和解析的方法研究了SiC隐埋沟道MOS结构夹断模式下C-V特性的畸变。 - The effects of SiO2 dielectric insulation limiting resistance on the accuracy of C-V measurements at high frequency and quasi-static are described in this paper.
本文描述了在高频和准静态C-V测量中，二氧化硅介质层有限电阻对测量准确性的影响。 - The thesis summarizes the applications of photoluminescence and electic C-V measurements.
综述了光荧光谱（PL）和电化学C-V测量在外延片测试中的应用。 - The stability and composition of oxidic film and the C-V characteristics of MOS structure have also been tested and analysed theoretically in this paper.
对氧化膜的组分和稳定性，以及MOS结构的C&V特性进行了实际测量和理论分析。 - Passivation of p-CZT Crystal and Its Effects on C-V Characteristics
p-CZT的钝化处理和C-V特性研究 - Third, we gave the detailed analysis and simulations of a type of C-V convert ASIC.
接着，对检测电路进行了研究。对一种C&V变换ASIC的各个功能模块进行分析、计算和模拟，给出性能特性。 - A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out.
本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析。 - The design method of tester for high frequency C-V Characteristic of MOS structure using frequency conversion technique and integrated chip is introduced.
本文阐述了用高频检测法测量MOS电容的原理，介绍了用变频技术和集成芯片设计MOS结构高频C-V特性测试仪的方法。 - A modified C-V method for determination of charge density in LB mono-film is presented.
本文介绍了一种新的测定单层LB膜中电荷密度的C-V方法，解决了常规C-V方法的不精确问题。 - Results show that HfO 2 gate dielectric hold good electrical characteristics.
实验结果显示：HfO2栅介质电容具有良好的C-V特性，较低的漏电流和较高的击穿电压。 - The component and characteristics of film have been studied by means of Infrared Spectroscopy, Auger Electron Spectroscopy, Ellipsometry and C-V measurement.
利用红外吸收光谱、俄歇电子能谱、椭圆偏振仪及C&V测试等分析方法研究了氮化硅膜的成份和性能。 - In the last, the paper introduces the Mumford-Shah model and C-V model.
文章最后对Mumford-Shah模型和简化的C-v模型及其数值计算进行了研究。 - This design got the dc characteristic and C-V characteristic curve, forecasted the high frequency characteristics, and analyzed the influence of the main parameters driven on the device characteristics deeply.
本设计得到了该器件的直流特性和C-V特性曲线，预测了器件的高频特性，并深入地分析了各重要参数对器件特性的影响。 - The three-dimensional image edges extraction method based on the local robust statistics and three-dimensional C-V model is studied.
研究了三维图像边缘提取的局部稳健统计C-V模型。 - Three-dimensional C-V model which can be used to detect three-dimensional crack directly are studied.
研究了可以直接对三维体数据进行边缘检测的三维C-V模型。 - A new front-to-front measurement structure is used for High-frequency C-V measurement.
高频CV测试中采用了正面接地的新的测试结构，克服了常规测试结构的缺点。