MOCVD

网络  金属有机化学气相沉积; 金属有机物化学气相沉积; 化学气相沉积设备; 有机金属化学气相沉积; 化学气相沉积

化学



双语例句

  1. Gravity roller carrier Numerical Study on Transport Phenomena in a MOCVD Reactor with Tangential Inlets
    重力运输机,辊子输送器水平切向喷射式MOCVD反应器输运过程的数值模拟研究
  2. Based on the analysis of energy loss in a laser diode, we optimize the structure of the laser diode and metal organic chemical vapor deposition ( MOCVD) growth condition.
    针对半导体激光器的能量损耗情况,设计优化了半导体激光器的结构,改进了材料的金属有机化学气相沉积(MOCVD)生长条件。
  3. Lateral epitaxial overgrowth GaN thin film with MOCVD
    MOCVD法横向外延过生长GaN薄膜
  4. Based on MOCVD Temperature Control System Structure Research
    基于MOCVD温度控制系统结构研究
  5. Study of Growth and Doping of ZnO Films by Plasma Assisted MOCVD
    ZnO薄膜的等离子体辅助MOCVD生长及掺杂研究
  6. The Method Study and Implementation of Temperature Control Based on Multi-chips MOCVD System
    多片式MOCVD系统温度控制方法研究与实现
  7. Research and Design of the Third Generation of MOCVD Control System Based on PLC
    基于PLC的第三代MOCVD控制系统研究与设计
  8. The Optimization Design of MOCVD Control System Based on PLC
    基于PLC的MOCVD控制系统的优化设计
  9. MOCVD Growth of Antimonide Semiconductors and Simulation of Antimonide-based Thermophotovoltaic Devices
    锑化物半导体材料的MOCVD生长研究及其热光伏器件的模拟分析
  10. Effect of the LP-MOCVD Growth Parameters For Type-ⅱ InAs/ GaSb Superlattices Surface Morphology
    低压MOCVD生长参量对Ⅱ型InAs/GaSb超晶格材料表面形貌的影响
  11. Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition ( MOCVD) with carbon nanotubes as templates in this paper.
    通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。
  12. Metallo organic chemical vapor deposition Simulation and optimization design in MOCVD reactor
    金属有机化学气相沉淀反应器结构的模拟优化
  13. Metal Organic Chemical Vapor Deposition ( MOCVD) is a key technology in growing thin-films.
    金属有机化学气相沉积(OCVD)一门制备薄膜材料的关键技术。
  14. Study of Growth and Properties of ZnO Films Grown on Si and GaAs Substrates by MOCVD
    采用MOCVD方法在Si和GaAs衬底上生长ZnO薄膜及其特性研究
  15. With the development of MBE and MOCVD technologies, the no-vel semiconductor superlattice multiquantum well LWIR detectors appear.
    随着分子束外延(MBE)和有机金属化学汽相淀积(MOCVD)技术的发展,出现了新型的半导体超晶格量子阱长波红外探测器。
  16. The applications of some methods such as MOD, MOCVD and Sol-Gel on preparation of ferroelectric films are emphasized.
    着重介绍了金属有机物化学气相沉积,金属有机物热分解,以及溶胶一凝胶三种制备技术在铁电薄膜制备领域中的应用。
  17. Polycrystalline GaAs films are grown successfully on insulating substrates by MOCVD technique.
    用MOCVD法在绝缘衬底上生长了多晶GaAs膜。
  18. TiO_2 was successfully supported on the surface of AC through MOCVD, and the deposition process was studied.
    采用MOCVD将TiO2成功负载到AC表面,并对沉积过程进行了研究。
  19. It provides a new method to the MOCVD control system design, and it is good for further researched and developed of the MOCVD control system.
    它为MOCVD控制系统的设计提供了新的思路和方法,为进一步研发MOCVD控制系统奠定了基础。
  20. Fe_2O_3 thin film gas sensing element has been prepared by using of MOCVD technique.
    本文采用MOCVD技术制备了薄膜型Fe2O3气敏元件。
  21. In order to enhance the reliability and repeatability of the ferroelectric thin film preparation, the liquid source MOCVD system is designed based on PLC.
    为了提高制备铁电薄膜的可靠性和重复性,设计了基于PLC控制的液态源MOCVD系统。
  22. TiO 2 nano powder was prepared by MOCVD process.
    采用热壁低压MOCVD方法制备了TiO2纳米粉末。
  23. The controlling technology trend for MOCVD system is analyzed.
    分析了MOCVD设备控制技术的发展趋势。
  24. Study on Control to Pressure and Difference-Pressure in Mocvd System
    MOCVD系统中压力和压差控制技术研究
  25. Secondly, carrying on the research for the MOCVD temperature control algorithms and computer simulation, so temperature control algorithm, which is suitable for the system, is gained.
    其次,进行了MOCVD温度控制算法研究和计算机仿真分析,从而得到了适合本系统的温度控制算法。
  26. This article mainly studies the temperature control system of MOCVD.
    本文主要研究MOCVD设备的温度控制。
  27. The temperature of MOCVD system is crucial in the control volumes.
    而温度是MOCVD系统中的极为关键的控制量。
  28. As a key technology of MOCVD, the temperature control system has always been a hot issue.
    温度控制作为MOCVD重要的技术组成,一直是研究的热点。
  29. Commercial GaN-based LEDs are usually grown by MOCVD on sapphire or SiC substrates.
    目前多数商业化的GaN基LED通常是在蓝宝石和SiC衬底上,通过有机物化学气相沉积生长。
  30. MOCVD ( Metal-Organic Chemical Vapor Deposition) is a new technology to produce nitride materials and ZnO-based optoelectronic devices.
    金属有机化学气相沉积技术(Metal-OrganicChemicalVaporDeposition,简称MOCVD)是制备基于氮化物和ZnO等材料的光电子器件的一种新技术。