Kev
英
美
网络 凯文; 能量; 千电子伏; 千电子伏特; 能量范围
BNC.13399
双语例句
- Kev's eyes were suddenly full of hate. 'Care?
凯夫的眼中忽然充满了仇恨。在乎？ - The cross sections for these fusion reactions are appreciable only for incident energies above 10 KeV.
只有当入射能量超过10千电子伏时，这些聚变反应的截面才是可观的。 - A Study on Effects of Proton Radiation with 140 keV on Spectrum Property of Quartz Glass
140keV质子辐照对石英玻璃光谱性能影响的研究 - Potassium chloride and potassium bromide crystals were effectively colored with 36 keV xenon ions.
用36keV氙离子注入，有效地使氯化钾和溴化钾晶体着色。 - Absorption and scattering properties of monoenergetic X rays of 30 keV-110 keV in iron have been studied with Monte Carlo method. The angular distributions of scattered photons and the spectra of backscattered radiation are presented.
用蒙特卡罗方法研究了能量为（30～110）keV的单能X射线在铁中的吸收及散射特性，给出了散射光子的角分布及背向散射光子的能谱分布。 - The angular distributions of sputtered Cu and Au atoms have been measured under normal and oblique incidence bombardment with 27 keV Ar+ for Cu-Au ( 30 wt%) alloy.
用27KeVAr~+分别在垂直和倾斜入射情况下，轰击了Cu-Au（30wt%）合金样品，测量了Cu和Au原子的溅射角分布。 - The average spectrum in pulsating phase fits with a bremsstrahlung of thermal electrons with KT~ 40 Kev;
脉动相的平均谱可用一个kT≈40KeV的热轫致辐射谱来拟合； - The theories and the calculation methods methods of electron scattering with keV and below keV energy by Monte Carlo simulation are discussed in this paper and the applications in the important fields i.e. electron microscopy and electron beam lithography are introduced.
本文讨论了keV和低于keV的电子在固体中散射的一般理论及MonteCarlo模拟计算方法，介绍了在电子显微学、电子束曝光等重要研究领域的一些应用实例。 - TCS correction factors have also been calculated by using efficiency functions and decay schemes, which are 1.10 and 1.11, respectively, for 60Co 1173 and 1332 keV γ-rays.
根据衰变纲图和效率，计算了这3个核素几个典型峰的校正因子，其中60Co的1173和1332keV因子分别为1.10和1.11。 - Preliminary research results for thermal-mechanical effects of the materials irradiated by high power pulsed ion beams ( HPIBs) applied to simulate 1 keV black radiation X-rays are reported.
主要介绍了利用高功率离子束模拟1keV黑体辐射X射线对材料的热-力学效应（thermal-mechanicaleffects）的初步研究结果。 - Theories and calculation methods of electron ( kev and below kev) scattering in solids and related applications
keV和低于keV的电子在固体中散射理论、计算方法及有关应用 - This result agrees with that of the absorption experiments of 60 KeV γ-ray.
为检验这一结论，作了60KeV宽束γ射线的吸收实验，结果与计算相符。 - Interfacial atomic mixing of Al/ Cr bilayered samples bombarded by 600 keV Kr+ ions has been investigated.
用600keV的Kr~+离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。 - MOS transistors and MOS ICs fabricated with different technologies and irradiated by 10 keV X-ray were observed for their threshold voltage shifts and performance changes under X-ray radiation.
我们用10kevX射线对MOS晶体管、MOS集成电路进行了辐照，观察了用不同工艺条件制造出的MOS晶体管，MOS集成电路在X射线辐照下阈值电压的漂移和特性变化。 - An ion implantation system based on a 30 keV mini-separator has been set up and tested at Fudan University.
叙述了在复旦大学加速器实验室30keV同位素分离器上建立的一套离子注入装置。 - Auger electron emission from Si, Al and Si_2N_4 excited by low-energy(≤ 4 keV) Ar~+ bombardment as well as the relationship between the L_ ( 2,3) MM peak-to-peak ampli-tude and Ar~+-excited energy have been studied.
研究了Si、Al和Si3N4等材料的低能（≤4keV）Ar~+激发的俄歇电子谱及其L（2,3）MM峰-峰值与Ar~+离子激发能量的关系。